impact of the gate width of al0.27ga0.73n/aln/al0.04ga0.96n/gan hemt on its characteristics

Clicks: 194
ID: 135439
2013
This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.
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jin2013internationalimpact Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Liwei Jin;Zhiqun Cheng;Qingna Wang
Journal american journal of physiology endocrinology and metabolism
Year 2013
DOI 10.1155/2013/738659
URL
http://dx.doi.org/10.1155/2013/738659
Keywords
electrical engineering electronics wireless telephone industry nuclear engineeringcellular telephone services industry

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