effect of annealing and of effect of annealing and of cooling rates on n-gaas electrode photoelectrochemical characteristics
Clicks: 189
ID: 149734
2004
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems
has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.
| Reference Key |
hilal2004activeeffect
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | ;Hikmat S. Hilal;Subhi K. Salih;Iyad A. Sa'adeddin;Guy Campet |
| Journal | anales de psicologia |
| Year | 2004 |
| DOI | 10.1080/0882751031000116115 |
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.