Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Clicks: 221
ID: 78432
2020
Reference Key
pu2020influencejournal Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Pu, T.
Journal journal of crystal growth
Year 2020
DOI 10.1016/j.jcrysgro.2019.125395
URL
Keywords Keywords not found

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