Interface passivation to overcome shunting in semiconductor-catalyst junctions.
Clicks: 212
ID: 91919
2020
High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.
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shadabipour2020interfacechemical
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| Authors | Shadabipour, Parisa;Hamann, Thomas W; |
| Journal | Chemical communications (Cambridge, England) |
| Year | 2020 |
| DOI | 10.1039/c9cc09597g |
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